◎ SEMIHOW REV.A0,December 2014

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

I

S

Continuous Source-Drain Diode Forward Current

--

--

170

A

I

SM

Pulsed Source-Drain Diode Forward Current

--

--

420

V

SD

Source-Drain Diode Forward Voltage

I

--

--

1.3

V

trr

Reverse Recovery Time

I

di

--

70

--

㎱

Qrr

Reverse Recovery Charge

--

150

--

nC

On Characteristics

BV

DSS

Drain-Source Breakdown Voltage

V

100

--

--

V

I

DSS

Zero Gate Voltage Drain Current

V

--

--

1

㎂

V

--

--

100

㎂

I

GSS

Gate-Body Leakage Current

V

--

--

±100

㎁

Off Characteristics

C

iss

Input Capacitance

V

f = 1.0 MHz

--

7900

--

㎊

C

oss

Output Capacitance

--

880

--

㎊

C

rss

Reverse Transfer Capacitance

--

540

--

㎊

R

g

Gate Resistance

V

--

2

--

Ω

Dynamic Characteristics

t

d(on)

Turn-On Time

V

R

--

90

--

㎱

t

r

Turn-On Rise Time

--

110

--

㎱

t

d(off)

Turn-Off Delay Time

--

330

--

㎱

t

f

Turn-Off Fall Time

--

80

--

㎱

Q

g

Total Gate Charge

V

V

--

190

--

nC

Q

gs

Gate-Source Charge

--

34

--

nC

Q

gd

Gate-Drain Charge

--

72

--

nC

Switching Characteristics

Source-Drain Diode Maximum Ratings and Characteristics

V

GS

Gate Threshold Voltage

V

2.0

--

3.6

V

R

DS(ON)

Static Drain-Source

On-Resistance

V

--

4.5

5.5

m

Ω

g

FS

Forward Transconductance

V

--

100

--

S

Notes :

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L=1mH, I