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HRS82N10K Datasheet(PDF) 3 Page - SemiHow Co.,Ltd. |
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HRS82N10K Datasheet(HTML) 3 Page - SemiHow Co.,Ltd. |
3 / 7 page ◎ SEMIHOW REV.A0,December 2014 Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 7000 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd * Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 20 40 60 80 100 120 0 2 4 6 8 10 12 V DS = 80V I D = 30V Q G, Total Gate Charge [nC] 10 0 10 1 10 1 10 2 V GS Top : 15 V 10 V 8 V 7 V 6 V 5.5 V 5 V Bottom : 4.5 V * Notes : 1. 300us Pulse Test 2. T C = 25 oC V DS, Drain-Source Voltage [V] 0 40 80 120 160 200 240 5.5 6.0 6.5 7.0 7.5 8.0 8.5 V GS = 10V ∗ Note : T J = 25 oC I D, Drain Current [A] 0.0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100 25 oC * Notes : 1. V GS= 0V 2. 300us Pulse Test V SD, Source-Drain Voltage [V] 175 oC 0 2 4 6 8 10 0.1 1 10 100 25 oC * Notes : 1. V DS= 20V 2. 300us Pulse Test V GS, Gate-Source Voltage [V] 175 oC |
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