D41D1

D41D7

D41D13

D41D2

D41D8

D41D14

D41D4

D41D10

D41D5

D41D11

PNP SILICON

POWER TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR D41D series types

are PNP silicon power transistors designed for amplifier

and switching applications. The NPN complementary

types are the D40D series.

MARKING: FULL PART NUMBER

D41D10

D41D11

D41D1

D41D4

D41D7

D41D13

MAXIMUM RATINGS: (TC=25°C)

SYMBOL D41D2

D41D5

D41D8

D41D14

UNITS

Collector-Emitter Voltage

VCES

45

60

75

90

V

Collector-Emitter Voltage

VCEO

30

45

60

75

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

1.0

A

Peak Collector Current

ICM

1.5

A

Power Dissipation

PD

6.25

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJC

20

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICES

VCE=Rated VCES

100

nA

IEBO

VEB=5.0V

100

nA

BVCEO

lC=10mA (D41D1, 2)

30

V

BVCEO

lC=10mA (D41D4, 5)

45

V

BVCEO

lC=10mA (D41D7, 8)

60

V

BVCEO

lC=10mA (D41D10, 11, 13, 14)

75

V

VCE(SAT)

lC=500mA, IB=50mA (D41D1, 2, 4, 5)

0.5

V

VCE(SAT)

lC=500mA, IB=50mA (D41D7, 8, 10, 11, 13, 14)

1.0

V

VBE(SAT)

lC=500mA, IB=50mA

1.5

V

D41D1

D41D4

D41D5

D41D7

D41D8

D41D10

D41D11

D41D13

D41D2

D41D14

MIN MAX

MIN MAX

MIN MAX

hFE

VCE=2.0V, IC=100mA

50

150

120

300

120

360

hFE

VCE=2.0V, IC=1.0A

(Except D40D13, 14)

10

-

20

-

10

-

TO-202 CASE

R1 (23-January 2012)

www.centr a lsemi.com