PN918

NPN SILICON RF TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR PN918 type

is an NPN silicon RF transistor, manufactured by

the epitaxial planar process and designed for high

frequency amplifier and oscillator applications.

MARKING: FULL PART NUMBER

TO-92 CASE

MAXIMUM RATINGS: (TA=25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

15

V

Emitter-Base Voltage

VEBO

3.0

V

Continuous Collector Current

IC

50

mA

Power Dissipation

PD

625

mW

Power Dissipation (TC=25°C)

PD

1.0

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

2.0

°C/W

Thermal Resistance

ΘJC

12.5

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=15V

10

nA

BVCBO

IC=1.0μA

30

V

BVCEO

IC=3.0mA

15

V

BVEBO

IE=10μA

3.0

V

VCE(SAT)

IC=10mA, IB=1.0mA

0.4

V

VBE(SAT)

IC=10mA, IB=1.0mA

1.0

V

hFE

VCE=1.0V, IC=3.0mA

20

fT

VCE=10V, IC=4.0mA, f=100MHz

600

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

1.7

pF

Cob

VEB=0, IE=0, f=1.0MHz

3.0

pF

Cib

VEB=0.5V, IC=0, f=1.0MHz

2.0

pF

Po

VCB=15V, IC=8.0mA, f=500MHz

30

mW

Gpe

VCB=12V, IC=6.0mA, f=200MHz

15

dB



VCB=15V, IC=8.0mA, f=500MHz

25

%

NF

VCE=6.0V, IC=1.0mA,

RG=400Ω, f=60kHz

6.0

dB

R0 (11-September 2012)

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