2N7002VC-7 datasheet(2/4 Pages) DIODES

Part #	2N7002VC-7

Description	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Download	4 Pages

Scroll/Zoom	100%

Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

Logo

2 / 4 page

2N7002VC/VAC

Maximum Ratings @TA = +25°C unless otherwise specified

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

60

V

Drain-Gate Voltage RGS ≤ 1.0M

Ω

VDGR

60

V

Gate-Source Voltage (Note 5)

Continuous

Pulsed

VGSS

±20

±40

V

Drain Current (Note 5)

Continuous

ID

280

mA

Drain Current (Note 5)

Pulsed

IDM

1.5

A

Thermal Characteristics @TA = +25°C unless otherwise specified

Characteristic

Symbol

Value

Units

Total Power Dissipation

PD

150

mW

Thermal Resistance, Junction to Ambient

RθJA

833

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = +25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

BVDSS

60

70



V

VGS = 0V, ID = 10µA

Zero Gate Voltage Drain Current

@ TC = +25°C

@ TC = +125°C

IDSS



1.0

500

µA

VDS = 60V, VGS = 0V

Gate-Body Leakage

IGSS



±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTIC (Note 6)

Gate Threshold Voltage

VGS(th)

1.0



2.5

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS (ON)



7.5

13.5

Ω

VGS = 5V, ID = 0.05A,

VGS = 10V, ID = 0.5A, Tj = 125°C

On-State Drain Current

ID(ON)

0.5

1.0



A

VGS = 10V, VDS = 7.5V

Forward Transconductance

gFS

80



mS

VDS = 10V, ID = 0.2A

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss



50

pF

VDS = 25V, VGS = 0V, f = 1.0MHz

Output Capacitance

Coss



25

pF

Reverse Transfer Capacitance

Crss



5.0

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)



20

ns

VDD = 30V, ID = 0.2A, RL = 150

Ω,

VGEN = 10V, RGEN = 25

Ω

Turn-Off Delay Time

tD(OFF)



20

ns

Notes:

5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

2N7002VC/VAC

Document number: DS30639 Rev. 7 - 2

2 of 4

www.diodes.com

August 2014

Similar Part No. - 2N7002VC-7

Manufacturer	Part #	Datasheet	Description
Diodes Incorporated	2N7002VC-7	160Kb / 3P	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS30639 Rev. 3 - 2
Diodes Incorporated	2N7002VC-7	130Kb / 3P	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

More results

Similar Description - 2N7002VC-7

Manufacturer	Part #	Datasheet	Description
Anpec Electronics Corop...	APM7312	118Kb / 9P	Dual N-Channel Enhancement Mode MOSFET
SYNC POWER Crop.	SPN7002D	258Kb / 9P	Dual N-Channel Enhancement Mode MOSFET
Taiwan Semiconductor Co...	TSM4410D	164Kb / 5P	Dual N-Channel Enhancement Mode MOSFET
Anpec Electronics Corop...	APM9966	151Kb / 12P	Dual N-Channel Enhancement Mode MOSFET
Anpec Electronics Corop...	APM7322K	117Kb / 10P	Dual N-Channel Enhancement Mode MOSFET
Diodes Incorporated	2N7002DW	217Kb / 5P	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
	DMG4800LSD	249Kb / 6P	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
	DMN601DMK	513Kb / 7P	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
GUANGDONG HOTTECH INDUS...	8205A	821Kb / 2P	Dual N-Channel Enhancement Mode MOSFET
Diodes Incorporated	DMN2040LSD	158Kb / 4P	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated	DMG8822UTS	156Kb / 6P	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

More results

2N7002VC-7 Datasheet(PDF) 2 Page - Diodes Incorporated

2N7002VC-7 Datasheet(HTML) 2 Page - Diodes Incorporated

Similar Part No. - 2N7002VC-7

Similar Description - 2N7002VC-7

Html Pages

1 2 3 4

Datasheet Download

Link URL