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CXE-1089ZSQ Datasheet(PDF) 2 Page - RF Micro Devices

Part # CXE-1089ZSQ
Description  50MHz to 1200MHz 75廓 pHEMT MMIC LNA
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

CXE-1089ZSQ Datasheet(HTML) 2 Page - RF Micro Devices

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DS100917
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
CXE-1089Z
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Small Signal Gain
12.9
dB
500MHz
Gain Flatness
+/-0.4
dB
50MHz to 1000MHz
Output Power at 1dB Compression
17.2
dBm
500MHz
Output Third Order Intercept Point
37.8
dBm
500MHz
CSO
-61
dBc
55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt,
+15.5dBmV Input
CTB
-79
dBc
55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt,
+15.5dBmV Input
Input Return Loss, Worst Case
16.4
dB
50MHz to 1000MHz, -40°C to +85°C
Output Return Loss, Worst Case
17.5
dB
50MHz to 1000MHz, -40°C to +85°C
Noise Figure
2.9
dB
500MHz
Device Operating Voltage
4.75
4.9
VDC
Device Operating Current
106
mA
Quiescent
Test Conditions: VD=+4.75VDC, ID=106mA, Typ. OIP3 Tone Spacing=1MHz, POUT per tone=+8dBm
T=+25°C, ZS=ZI=75Ω, Tested with +5VDC Applications Circuit
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Small Signal Gain
12.7
dB
500MHz
Gain Flatness
+/-0.4
dB
50MHz to 1000MHz
Output Power at 1dB Compression
14.2
dBm
500MHz
Output Third Order Intercept Point
35.4
dBm
500MHz
CSO
-56
dBc
55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt,
+15.5dBmV Input
CTB
-78
dBc
55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt,
+15.5dBmV Input
Input Return Loss, Worst Case
16.4
dB
50MHz to 1000MHz, -40°C to +85°C
Output Return Loss, Worst Case
17.5
dB
50MHz to 1000MHz, -40°C to +85°C
Noise Figure
2.8
dB
500MHz
Device Operating Voltage
3.3
3.5
VDC
Device Operating Current
75
mA
Quiescent
Test Conditions: VD=+3.3VDC, ID=75mA, Typ. OIP3 Tone Spacing=1MHz, POUT per tone=+8dBm
T=+25°C, ZS=ZI=75Ω, Tested with +5VDC Applications Circuit
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ID)
125
mA
Device Voltage (VD)5.5
V
Power Dissipation
690
mW
RF Input Power* (See Note)
23
dBm
Junction Temperature (TJ)+150
°C
Operating Temperature Range (TL)
-40 to +85
°C
Storage Temperature Range
-65 to +150
°C
ESD Rating - Human Body Model
(HBM)
Class 1A
Moisture Sensitivity Level
MSL 2
*Note: Load condition, 10:1 VSWR
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
TL=TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.


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