DMN5/L06VK/L06VAK/010VAK

Document number: DS30769 Rev. 11 - 2

2 of 6

www.diodes.com

May 2014

© Diodes Incorporated

DMN5/L06VK/L06VAK/010VAK

Characteristic

Symbol

Value

Unit

Drain Source Voltage

50

V

50

V

Gate-Source Voltage

Continuous

Pulsed

±20

±40

V

Drain Current (Note 6)

Continuous

Pulsed

280

1.5

mA

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

250

mW

Thermal Resistance, Junction to Ambient (Note 6)

500

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

50

—

—

V

Zero Gate Voltage Drain Current

—

—

60

nA

Gate-Body Leakage

—

—

1

500

50

µA

nA

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.49

0.30

—

1.0

1.2

V

Static Drain-Source On-Resistance

—

—

—

—

—

—

3.0

2.5

2.0

Ω

On-State Drain Current

0.5

1.4

—

A

Forward Transconductance

200

—

—

mS

Source-Drain Diode Forward Voltage

0.5

—

1.4

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

—

50

pF

f = 1.0MHz

Output Capacitance

—

—

25

pF

Reverse Transfer Capacitance

—

—

5.0

pF

Notes:

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.