DMN32D2LV

Document number: DS31121 Rev. 8 - 2

2 of 6

www.diodes.com

March 2015

© Diodes Incorporated

DMN32D2LV

Characteristic

Symbol

Value

Unit

Drain Source Voltage

30

V

Gate-Source Voltage

±10

V

Drain Current (Note 5)

400

mA

Total Power Dissipation (Note 5)

400

mW

Thermal Resistance, Junction to Ambient (Note 5)

313

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

30





V

Zero Gate Voltage Drain Current





1

µA

Gate-Body Leakage







±1

±10

±500

±100

µA

nA

nA

Gate-Body Leakage (Note 7)



±8

±15

±100

±100

nA

nA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

0.6



1.2

V

Static Drain-Source On-Resistance













2.2

1.5

1.2

Forward Transconductance

100





mS

Source-Drain Diode Forward Voltage

0.5



1.4

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance



39



pF

f = 1.0MHz

Output Capacitance



10



pF

Reverse Transfer Capacitance



3.6



pF

Switching Time

Turn-on Time



11



nS

Turn-off Time



51



nS

Notes:

5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.