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2N7002KQ-7 Datasheet(PDF) 2 Page - Diodes Incorporated |
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2N7002KQ-7 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page 2N7002K Document number: DS30896 Rev. 14 - 2 2 of 6 www.diodes.com August 2013 © Diodes Incorporated 2N7002K Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 380 300 mA t<5s TA = +25°C TA = +70°C ID 430 340 mA Continuous Drain Current (Note 6) VGS = 5V Steady State TA = +25°C TA = +70°C ID 310 240 mA t<5s TA = +25°C TA = +70°C ID 350 270 mA Maximum Continuous Body Diode Forward Current (Note 6) IS 0.5 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) (Note 6) IDM 1.2 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 370 mW Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 357 °C/W t<5s 292 Total Power Dissipation (Note 6) PD 540 mW Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 240 °C/W t<5s 197 Thermal Resistance, Junction to Case (Note 6 ) RθJC 91 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS — — 1.0 µA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS — — ±10 µA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 1.0 1.6 2.5 V VDS = 10V, ID = 1mA Static Drain-Source On-Resistance RDS(ON) — — — 2.0 3.0 Ω VGS = 10V, ID = 0.5A VGS = 5V, ID = 0.05A Forward Transfer Admittance |Yfs| 80 — — ms VDS =10V, ID = 0.2A Diode Forward Voltage VSD — 0.75 1.1 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 30 50 pF VDS = 25V, VGS = 0V f = 1.0MHz Output Capacitance Coss — 4.2 25 pF Reverse Transfer Capacitance Crss — 2.9 5.0 pF Gate Resistance Rg — 133 — Ω f = 1MHz , VGS = 0V, VDS = 0V Total Gate Charge Qg — 0.3 — nC VGS = 4.5V, VDS = 10V, ID = 250mA Gate-Source Charge Qgs — 0.2 — nC Gate-Drain Charge Qgd — 0.08 — nC Turn-On Delay Time tD(on) — 3.9 — ns VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA Turn-On Rise Time tr — 3.4 — ns Turn-Off Delay Time tD(off) — 15.7 — ns Turn-Off Fall Time tf — 9.9 — ns Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. |
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