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2N7002-13-F Datasheet(PDF) 2 Page - Diodes Incorporated |
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2N7002-13-F Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page  2N7002 Document number: DS11303 Rev. 33 - 2 2 of 5 www.diodes.com July 2013 © Diodes Incorporated 2N7002 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS 1.0M VDGR 60 V Gate-Source Voltage Continuous Pulsed VGSS ±20 ±40 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +85°C TA = +100°C ID 170 120 105 mA Continuous Drain Current (Note 7) VGS = 10V Steady State TA = +25°C TA = +85°C TA = +100°C ID 210 150 135 mA Maximum Body Diode Forward Current (Note 7) Pulsed Continuous IS 0.5 2 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 800 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 6) PD 370 mW (Note 7) 540 Thermal Resistance, Junction to Ambient (Note 6) RθJA 348 °C/W (Note 7) 241 Thermal Resistance, Junction to Case (Note 7) RθJC 91 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 60 70 V VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current @ TC = +25°C @ TC = +125°C IDSS 1.0 500 µA VDS = 60V, VGS = 0V Gate-Body Leakage IGSS ±10 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 1.0 2.5 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance @ TJ = +25°C @ TJ = +25°C @ TJ = +125°C RDS(ON) 3.2 4.4 7.5 5.0 13.5 VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, ID = 0.5A On-State Drain Current ID(ON) 0.5 1.0 A VGS = 10V, VDS = 7.5V Forward Transconductance gFS 80 mS VDS =10V, ID = 0.2A Diode Forward Voltage VSD 0.78 1.5 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 22 50 pF VDS = 25V, VGS = 0V f = 1.0MHz Output Capacitance Coss 11 25 pF Reverse Transfer Capacitance Crss 2.0 5.0 pF Gate resistance Rg 120 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Qg 223 pC VDS = 10V, ID = 250mA Gate-Source Charge Qgs 82 Gate-Drain Charge Qgd 178 SWITCHING CHARACTERISTICS (Note 9) Turn-On Delay Time tD(on) 2.8 ns VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 Turn-On Rise Time tr 3.0 Turn-Off Delay Time tD(off) 7.6 Turn-Off Fall Time tf 5.6 Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout 7. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
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