DMN601VK_15_15 datasheet(2/6 Pages) DIODES

Part #	DMN601VK_15

Description	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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2 / 6 page

DMN601VK

Document number: DS30655 Rev. 5 - 2

2 of 6

www.diodes.com

April 2015

DMN601VK

Maximum Ratings (@TA = +25°C unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Note 5)

Continuous Pulsed (Note 6)

ID

305

800

mA

Thermal Characteristics (@TA = +25°C unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

Pd

250

mW

Thermal Resistance, Junction to Ambient

RJA

500

°C/W

Operating and Storage Temperature Range

Tj, TSTG

-65 to +150

°C

Electrical Characteristics (@TA = +25°C unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

60



V

VGS = 0V, ID = 10µA

Zero Gate Voltage Drain Current

IDSS



250

nA

VDS = 50V, VGS = 0V

Gate-Source Leakage

IGSS



500

nA

VGS = 10V, VDS = 0V



100

VGS = 5V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(th)

1.0

1.6

2.5

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS (ON)



2.0

3.0

Ω

VGS = 10V, ID = 0.5A

VGS = 4.5V, ID = 200mA

Forward Transfer Admittance

|Yfs|



284



ms

VDS =10V, ID = 0.2A

Diode Forward Voltage (Note 7)

VSD

0.5



1.4

V

VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss



50

pF

VDS = 25V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss



25

pF

Reverse Transfer Capacitance

Crss



5.0

pF

Notes:

5. Device mounted on FR-4 PCB.

6. Pulse width

10S, Duty Cycle 1%.

7. Short duration pulse test used to minimize self-heating effect.

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DMN601VK_15 Datasheet(PDF) 2 Page - Diodes Incorporated

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