DMN2005LP4K

Document number: DS30799 Rev. 8 - 2

1 of 7

www.diodes.com

May 2015

© Diodes Incorporated

DMN2005LP4K

N-CHANNEL ENHANCEMENT MODE MOSFET

Features



Low On-Resistance



Very Low Gate Threshold Voltage, 0.9V Max.



Fast Switching Speed



Low Input/Output Leakage



Ultra-Small Surface Mount Package



Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)



Halogen and Antimony Free. “Green” Device (Note 3)



ESD Protected Gate



Ultra Low Profile Package



Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data



Case: X2-DFN1006-3



Case Material: Molded Pl

astic, “Green” Molding Compound;

UL Flammability Classification Rating 94V-0



Moisture Sensitivity: Level 1 per J-STD-020



Terminal Connections: See Diagram



Terminals: Finish

 NiPdAu over Copper leadframe; Solderable

per MIL-STD-202, Method 208



Weight: 0.001 grams (Approximate)

Part Number

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

DMN2005LP4K-7

DN

7

8

3,000

DMN2005LP4K-7B

DN

7

8

10,000

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-

free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

e4

X2-DFN1006-3

Bottom View

Equivalent Circuit

Top View

Pin-Out

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

D

S

G

ESD PROTECTED