1 of 11

Optimum Technology Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

BiFET HBT

LDMOS

RDA2032Z

50MHz TO 1000MHz DIGITAL VGA WITH 6-BIT

0.5dB PARALLEL CONTROL

RFMD’s RDA2032Z is a digital controlled variable gain amplifier (DVGA) featuring

high linearity over the entire gain control range. The attenuation of the 6-bit digital

step attenuator is programmed with a parallel mode control interface. The

RDA2032Z has two amplifier stages packaged in a small 5.2mmx5.2mm leadless

laminate MCM containing plated through thermal vias for ultra low thermal resis-

tance. The footprint for this module is directly compatible with a 5mmx5mm 32-pin

QFN. This module is easy to use with no external matching components required.

Features



Broadband 50MHz to 1000MHz

Operation



6-Bit Digital Step Attenuator



Parallel Mode Gain Programming



Max Gain=38.8dB at 140MHz



Gain Control Range=31.5dB

(0.5dB Step Size)



High OIP3/P1dB=+42/20dBm

at 140MHz



Single +5V Supply



3V or 5V Logic Level Compatible



Small 32-Pin, 5.2mmx5.2mm,

MCM



Footprint Compatible with

5mmx5mm 32-Pin QFN

Applications



Linear IF Applications



Cellular, 3G Infrastructure



WiBro, WiMAX, LTE



Microwave Radio



High Linearity Power Control

DS100813





Package: MCM 32-Pin, 5.2mmx5.2mm

RDA2032Z

50MHz to

1000MHz Dig-

ital VGa with 6-

Bit 0.5dB Par-

allel Control