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RQ3E160AD Datasheet(PDF) 1 Page - Rohm |
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RQ3E160AD Datasheet(HTML) 1 Page - Rohm |
1 / 12 page RQ3E160AD Nch 30V 16A Middle Power MOSFET Datasheet l lOutline VDSS 30V HSMT8 RDS(on)(Max.) 4.5mΩ ID ±16A PD 2W l lInner circuit l lFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package. 4) Pb-free lead plating ; RoHS compliant l lPackaging specifications Type Packing Embossed Tape Reel size (mm) 330 l lApplication Tape width (mm) 12 Switching Basic ordering unit (pcs) 3000 Taping code TB Marking E160AD l lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage VDSS 30 V Continuous drain current ID*1 ±16 A Pulsed drain current ID,pulse*2 ±64 A Gate - Source voltage VGSS ±20 V Avalanche energy, single pulse EAS*3 23 mJ Avalanche current IAS*3 16 A Power dissipation PD*4 2 W Junction temperature Tj 150 ℃ Range of storage temperature Tstg -55 to +150 ℃ www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/11 20140821 - Rev.001 |
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