2N5457

2N5458

2N5459

SILICON

N-CHANNEL JFETS

The CENTRAL SEMICONDUCTOR 2N5457, 2N5458,

and 2N5459 are silicon N-Channel JFETs designed for

switching and amplifier applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Drain-Source Voltage

VDS

25

V

Drain-Gate Voltage

VDG

25

V

Gate-Source Voltage

VGS

25

V

Continuous Gate Current

IG

10

mA

Power Dissipation

PD

310

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

2N5457

2N5458

2N5459

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

MIN

MAX

UNITS

IGSS

VGS=15V

-

1.0

-

1.0

-

1.0

nA

IGSS

VGS=15V, TA=100°C

-

200

-

200

-

200

nA

IDSS

VDS=15V

1.0

5.0

2.0

9.0

4.0

16

mA

BVGSS

IG=10μA

25

-

25

-

25

-

V

VGS(OFF)

VDS=15V, ID=10nA

0.5

6.0

1.0

7.0

2.0

8.0

V

Crss

VDS=15V, VGS=0, f=1.0MHz

-

3.0

-

3.0

-

3.0

pF

Ciss

VDS=15V, VGS=0, f=1.0MHz

-

7.0

-

7.0

-

7.0

pF

gfs

VDS=15V, VGS=0, f=1.0kHz

1.0K

5.0K

1.5K

5.5K

2.0K

6.0K

μS

gos

VDS=15V, VGS=0, f=1.0kHz

-

50

-

50

-

50

μS

TO-92 CASE

R1 (6-March 2014)

www.centr a lsemi.com