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RF5623

DS120213

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Absolute Maximum Ratings

Parameter

Rating

Unit

Supply Voltage (RF Applied)

-0.5 to +5.25

V

Supply Voltage (No RF Applied)

-0.5 to +6.0

V

DC Supply Current

850

mA

Input RF Power

+10*

dBm

Operating Ambient Temperature

-40 to +85

°C

Storage Temperature

-40 to +150

°C

Moisture Sensitivity

MSL1

*Note: Maximum input power with a 50

 load.

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Compliance WiMAX

IEEE802.16e

cycle=37.029% unless otherwise specified. 802.16e

16QAM modulation with 10MHz BW signal

Frequency Range

3.3

3.6

GHz

3.6

3.8

GHz

Output Power

26

dBm

EVM

2.5

3.5

%

Operating Current

600

700

mA

Quiescent Current

380

470

mA

10

mA

10

mA

Leakage Current

1

mA

Gain

28

32

dB

at Rated output Power

Gain Variation over Temperature

2

±dB

-40°C to +85°C

Low Gain Mode (Gain Reduction)

25

dB

Temp=25°C (In this mode the gain of the power

amplifier drops by TBD typical from its original gain)

Power Detector

10

29

dBm

Useable power detection range

Input Return Loss

-15

-10

dB

Output P1dB

32

dBm

Turn-On Time

0.5

1.0

us

Output stable to within 90% of final gain

Thermal Data

Maximum Junction Temperature

for long term reliability, Tj Max

150

°C

Thermal Resistance,

jc

23.7

°C/W

Thermal Resistance,

j-Ref

29.7

°C/W

Human Body Model

1000

V

Charge Device Model

1000

V

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.