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RF5623HL50PCBA-410 Datasheet(PDF) 2 Page - RF Micro Devices |
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RF5623HL50PCBA-410 Datasheet(HTML) 2 Page - RF Micro Devices |
2 / 18 page 2 of 18 RF5623 DS120213 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Absolute Maximum Ratings Parameter Rating Unit Supply Voltage (RF Applied) -0.5 to +5.25 V Supply Voltage (No RF Applied) -0.5 to +6.0 V DC Supply Current 850 mA Input RF Power +10* dBm Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +150 °C Moisture Sensitivity MSL1 *Note: Maximum input power with a 50 load. Parameter Specification Unit Condition Min. Typ. Max. Compliance WiMAX IEEE802.16e Nominal Condition T=25 °C, VCC=5.0V, VREG=2.85V, Freq=Full frequency range and duty cycle=37.029% unless otherwise specified. 802.16e 16QAM modulation with 10MHz BW signal Frequency Range 3.3 3.6 GHz 3.6 3.8 GHz Output Power 26 dBm EVM 2.5 3.5 % at POUT=26dBm Operating Current 600 700 mA Quiescent Current 380 470 mA VCC=5.0V, VREG=2.85V, RF=Off IREG 10 mA PDOWN Current 10 mA Leakage Current 1 mA VCC=5.0V, VREG=0V, RF=Off Gain 28 32 dB at Rated output Power Gain Variation over Temperature 2 ±dB -40°C to +85°C Low Gain Mode (Gain Reduction) 25 dB at VCC=5.0V, VREG 1 and 3=2.85V, VREG2= Low and Temp=25°C (In this mode the gain of the power amplifier drops by TBD typical from its original gain) Power Detector 10 29 dBm Useable power detection range Input Return Loss -15 -10 dB Output P1dB 32 dBm with CW signal at VCC=5.0V Turn-On Time 0.5 1.0 us Output stable to within 90% of final gain Thermal Data Maximum Junction Temperature for long term reliability, Tj Max 150 °C POUT=26dBm, VCC=5VDc, VREG=2.85VDc. TREF = 85°C Thermal Resistance, jc 23.7 °C/W POUT = 26dBm, VCC=5VDc, VREG=2.85VDc, Junction to bottom of QFN package. TREF = 85°C Thermal Resistance, j-Ref 29.7 °C/W POUT=26dBm, VCC=5VDc, VREG=2.85VDc, Junction to bottom of PCB. TREF = 85°C Human Body Model 1000 V Charge Device Model 1000 V Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. |
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