DMT6010LFG

Document number: DS36620 Rev. 3 - 2

2 of 6

www.diodes.com

February 2015

© Diodes Incorporated

DMT6010LFG

Characteristic

Symbol

Value

Units

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

13

11

A

30

24

A

Maximum Continuous Body Diode Forward Current (Note 5)

3

A

Pulsed Drain Current (10

μs pulse, duty cycle = 1%)

80

A

Avalanche Current, L=0.1mH

20

A

Avalanche Energy, L=0.1mH

64

mJ

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

2.2

W

41

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

55

°C/W

t<10s

35

Thermal Resistance, Junction to Case (Note 5)

3

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

60

—

—

V

Zero Gate Voltage Drain Current

—

—

1

μA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

0.8

—

2

V

Static Drain-Source On-Resistance

—

6

7.5

m

Ω

—

7.8

11.5

Diode Forward Voltage

—

0.9

1.2

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

—

2090

—

pF

f = 1.0MHz

Output Capacitance

—

746

—

Reverse Transfer Capacitance

—

38.5

—

Gate resistance

—

0.59

—

Ω

—

19.3

—

nC

—

41.3

—

Gate-Source Charge

—

6.0

—

Gate-Drain Charge

—

8.8

—

Turn-On Delay Time

—

5.7

—

nS

Turn-On Rise Time

—

4.3

—

Turn-Off Delay Time

—

23.4

—

Turn-Off Fall Time

—

9.7

—

Notes:

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.