DMP4050SSD

Document Number DS32107 Rev 3 - 2

4 of 8

www.diodes.com

April 2013

© Diodes Incorporated

A Product Line of

Diodes Incorporated

DMP4050SSD

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-40





V

Zero Gate Voltage Drain Current





-0.5

µA

Gate-Source Leakage





100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1.0



-3.0

V

Static Drain-Source On-Resistance (Note 12)



0.038

0.050

Ω

0.055

0.079

Forward Transconductance (Notes 12 & 13)



14



S

Diode Forward Voltage (Note 12)



-0.86

-1.2

V

Reverse recovery time (Note 13)



18



ns

Reverse recovery charge (Note 13)



12.7



nC

DYNAMIC CHARACTERISTICS (Note 13)

Input Capacitance



674



pF

f = 1MHz

Output Capacitance



115



pF

Reverse Transfer Capacitance



67.7



pF

Total Gate Charge (Note 14)



6.9



nC

Total Gate Charge (Note 14)



13.9



nC

Gate-Source Charge (Note 14)



2



nC

Gate-Drain Charge (Note 14)



3.4



nC

Turn-On Delay Time (Note 14)



1.9



ns

Turn-On Rise Time (Note 14)



3.1



ns

Turn-Off Delay Time (Note 14)



31.5



ns

Turn-Off Fall Time (Note 14)



12.6



ns

Notes:

12. Measured under pulsed conditions. Pulse width

 300s; duty cycle  2%

13. For design aid only, not subject to production testing.

14. Switching characteristics are independent of operating junction temperatures.