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CQ220-8B Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CQ220-8B Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page  CQ220-8B CQ220-8D CQ220-8M CQ220-8N 8.0 AMP TRIAC 200 THRU 800 VOLTS TO-220 CASE Central Semiconductor Corp. TM R2 (24-September 2004) DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ220-8B series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQ220 CQ220 CQ220 CQ220 -8B -8D -8M -8N UNITS Peak Repetitive Off-State Voltage VDRM 200 400 600 800 V RMS On-State Current (TC=90°C) IT(RMS) 8.0 A Peak One Cycle Surge (t=8.3ms) ITSM 50 A I2t Value for Fusing (t=8.3ms) I2t10 A2s Peak Gate Power (tp=10µs) PGM 40 W Average Gate Power Dissipation PG (AV) 1.0 W Peak Gate Current (tp=10µs) IGM 4.0 A Peak Gate Voltage (tp=10µs) VGM 16 V Critical Rate of Rise of On-State Current Repetitive (f=60Hz) di/dt 10 A/µs Storage Temperature Tstg -40 to +150 °C Junction Temperature TJ -40 to +125 °C Thermal Resistance ΘJA 60 °C/W Thermal Resistance ΘJC 3.2 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM Rated VDRM 10 µA IDRM Rated VDRM, TC=125°C 500 µA IGT VD=12V, RL=10Ω, QUAD I, II, III 4.5 20 mA IGT VD=12V, RL=10Ω, QUAD IV 17 50 mA IH IT=100mA 4.7 25 mA VGT VD=12V, RL=10Ω, QUAD I, II, III 0.95 1.50 V VGT VD=12V, RL=10Ω, QUAD IV 1.35 2.50 V VTM ITM=11A, tp=380µs 1.30 1.75 V dv/dt VD=2/3 VDRM, RGK=∞, TC=125°C 5.0 V/µs |
Similar Part No. - CQ220-8B |
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Similar Description - CQ220-8B |
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