CTLM8110-M832D_15 datasheet(2/2 Pages) CENTRAL

Part #	CTLM8110-M832D

Description	SILICON SCHOTTKY RECTIFIER

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Manufacturer	CENTRAL [Central Semiconductor Corp]

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CTLM8110-M832D

MULTI DISCRETE MODULE ™

SURFACE MOUNT P-CHANNEL

ENHANCEMENT-MODE SILICON MOSFET

AND

LOW VF SILICON SCHOTTKY RECTIFIER

ELECTRICAL CHARACTERISTICS - Q1 - Continued: (TA=25°C)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Qg(tot)

VDS=10V, VGS=4.5V, ID=1.0A

3.56

nC

Qgs

VDS=10V, VGS=4.5V, ID=1.0A

0.36

nC

Qgd

VDS=10V, VGS=4.5V, ID=1.0A

1.52

nC

Crss

VDS=16V, VGS=0, f=1.0MHz

80

pF

Ciss

VDS=16V, VGS=0, f=1.0MHz

200

pF

Coss

VDS=16V, VGS=0, f=1.0MHz

60

pF

ton

VDD=10V, VGS=4.5V, ID=0.95A, RG=6.0Ω

20

ns

toff

VDD=10V, VGS=4.5V, ID=0.95A, RG=6.0Ω

25

ns

ELECTRICAL CHARACTERISTICS - D1: (TA=25°C)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IR

VR=5.0V

10

μA

IR

VR=8.0V

20

μA

IR

VR=15V

50

μA

BVR

IR=100μA

40

V

VF

IF=10mA

0.29

V

VF

IF=100mA

0.36

V

VF

IF=500mA

0.45

V

VF

IF=1.0A

0.55

V

CJ

VR=4.0V, f=1.0MHz

50

pF

TLM832D CASE - MECHANICAL OUTLINE

SUGGESTED MOUNTING PADS

For Maximum Power Dissipation

(Dimensions in mm)

For standard mounting refer

to TLM832D Package Details

LEAD CODE:

1) Gate Q1

2) Source Q1

3) Anode D1

4) Anode D1

5) Cathode D1

6) Cathode D1

7) Drain Q1

8) Drain Q1

MARKING CODE: CFR

PIN CONFIGURATION

* Note:

- Exposed pad P1 common to pins 7 and 8

- Exposed pad P2 common to pins 5 and 6

www.centr a lsemi.com

R2 (2-August 2011)

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