MCR716

MCR718

SURFACE MOUNT

SILICON CONTROLLED RECTIFIERS

4.0 AMP, 400 THRU 600 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MCR716 and

MCR718 are epoxy molded SCRs designed for sensing

circuit and control system applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

MCR716

MCR718

UNITS

Peak Repetitive Off-State Voltage

VDRM, VRRM

400

600

V

RMS On-State Current (TC=85°C)

IT(RMS)

4.0

A

Peak non-Repetitive Surge Current

(1/2 cycle Sine wave, 50Hz/60Hz)

ITSM

15

A

1.1

Peak Gate Power, tp=1.0μs

PGM

0.5

W

Average Gate Power Dissipation

PG(AV)

0.1

W

Peak Gate Current, tp=1.0μs

IGM

0.2

A

Critical Rate of Rise of On-State Current

di/dt

50

A/μs

Storage Temperature

Tstg

-40 to +150

°C

Junction Temperature

TJ

-40 to +125

°C

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ

10

μA

IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C

200

μA

IGT

VD=12V, RL=10Ω

1.0

38

75

μA

IH

IT=50mA, RGK=1.0KΩ

0.25

2.0

mA

VGT

VD=12V, RL=10Ω

0.55

0.8

V

VTM

ITM=8.0A, tp=380μs

1.6

1.8

V

dv/dt

10

V/μs

DPAK CASE

R2 (21-January 2013)

www.centr a lsemi.com