2011. 3. 16

2/6

KF5N53DZ/DS

Revision No : 0

ELECTRICAL CHARACTERISTICS (Tc=25

℃)

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 4) Pulse Test : Pulse width

≤300㎲, Duty Cycle≤2%.

Note 5) Essentially independent of operating temperature.

2

PRODUCT NAME

LOT NO

1

001

2

KF5N53

DZ

1

001

2

KF5N53

DS

1

Marking

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

525

-

-

V

Breakdown Voltage Temperature Coefficient

ΔBV

-

0.57

-

V/

℃

Drain Cut-off Current

-

-

10

㎂

Gate Threshold Voltage

2.5

-

4.5

V

Gate Leakage Current

-

-

±10

㎂

Drain-Source ON Resistance

-

1.35

1.5

Ω

Dynamic

Total Gate Charge

(Note4,5)

-

12

-

nC

Gate-Source Charge

-

2.4

-

Gate-Drain Charge

-

5.4

-

Turn-on Delay time

(Note4,5)

-

22.5

-

ns

Turn-on Rise time

-

29

-

Turn-off Delay time

-

58

-

Turn-off Fall time

-

18

-

Input Capacitance

-

430

-

pF

Output Capacitance

-

71

-

Reverse Transfer Capacitance

-

7.5

-

Source-Drain Diode Ratings

Continuous Source Current

-

-

5

A

Pulsed Source Current

-

-

20

Diode Forward Voltage

-

-

1.4

V

Reverse Recovery Time

KF5N53DZ

dIs/dt=100A/

㎲

-

300

-

ns

KF5N53DS

-

150

-

Reverse Recovery Charge

KF5N53DZ

-

2.0

-

μC

KF5N53DS

-

0.42

-