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KF7N50D Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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KF7N50D Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
1 / 6 page 2011. 10 . 4 1/6 SEMICONDUCTOR TECHNICAL DATA KF7N50D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR Revision No : 0 General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ・V DSS(Min.)= 500V, ID= 5.5A ・R DS(ON)=1.0 Ω(Max) @VGS =10V ・Qg(typ.) =16nC MAXIMUM RATING (Tc=25 ℃) * : Drain current limited by maximum junction temperature. G D S DPAK (1) DIM MILLIMETERS A A B B C C D D F FF H G K G J L K L M 0.96 MAX 0.90 MAX E E M N H 0.70 MIN O 0.1 MAX N 12 3 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ J O 1. GATE 2. DRAIN 3. SOURCE IPAK(1) 123 A A B C C D E F FF G G H H J J L L 0.96 MAX K M P M N P N 6.6 0.2 + _ 6.1 0.2 + _ 5.34 0.3 + _ 0.7 0.2 + _ 9.3 0.3 + _ 2.3 0.2 + _ 0.76 0.1 + _ 2.3 0.1 + _ 0.5 0.1 + _ 1.8 0.2 + _ 0.5 0.1 + _ 1.0 0.1 + _ + _ 1.02 0.3 DIM MILLIMETERS 1. GATE 2. DRAIN 3. SOURCE PIN CONNECTION KF7N50I KF7N50D CHARACTERISTIC SYMBOL RATING UNIT KF7N50D/I Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Drain Current @TC=25℃ ID 5.5 A @TC=100℃ 3.5 Pulsed (Note1) IDP 21 Single Pulsed Avalanche Energy (Note 2) EAS 180 mJ Repetitive Avalanche Energy (Note 1) EAR 4 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Drain Power Dissipation Tc=25 ℃ PD 69.4 W Derate above25 ℃ 0.56 W/ ℃ Maximum Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ~150 ℃ Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 1.8 ℃/W Thermal Resistance, Junction-to- Ambient RthJA 110 ℃/W |
Similar Part No. - KF7N50D_15 |
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Similar Description - KF7N50D_15 |
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