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M30620MC-388FP Datasheet(PDF) 10 Page - Mitsubishi Electric Semiconductor |
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M30620MC-388FP Datasheet(HTML) 10 Page - Mitsubishi Electric Semiconductor |
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10 / 33 page  Electrical characteristics Mitsubishi microcomputers M16C / 62M Group (Low voltage version) SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER 10 Table 1.26.3. Electrical characteristics (referenced to VCC = 2.7V to 3.6V, VSS = 0V at Ta = – 20oC to 85oC / – 40oC to 85oC (Note1), f(XIN) = 10MHZ without wait unless otherwise specified) V V XOUT 2.5 2.5 V 0.5 V XOUT 0.5 0.5 2.5 IOH=–1mA IOH=–0.1mA IOH=–50 µA IOL=1mA IOL=0.1mA IOL=50 µA P00 to P07, P10 to P17, P20 to P27, P30 to P37, P00 to P07, P10 to P17, P20 to P27, P30 to P37, P40 to P47, P50 to P57, P60 to P67, P72 to P77, P40 to P47, P50 to P57, P60 to P67, P70 to P77, P80 to P84, P86,P87, P90 to P97, P100 to P107 HIGHPOWER LOWPOWER HIGHPOWER LOWPOWER P80 to P84, P86,P87, P90 to P97, P100 to P107 HIGHPOWER LOWPOWER XCOUT 3.0 1.6 V 0.20.8V 0.21.8V P00 to P07, P10 to P17, P20 to P27, P30 to P37, P40 to P47, P50 to P57, P60 to P67, P70 to P77, P80 to P87, P90 to P97, P100 to P107, 4.0 µA µA When clock is stopped2.0V RESET XIN, RESET, CNVss, BYTE VI=3V VI=0V–4.0 P00 to P07, P10 to P17, P20 to P27, P30 to P37, P40 to P47, P50 to P57, P60 to P67, P70 to P77, P80 to P87, P90 to P97, P100 to P107, XIN, RESET, CNVss, BYTE XIN XCIN 10.0 3.0 M Ω M Ω Square wave, no division f(XIN)=10MHz mA 9.521.25 Mask ROM version 75 k Ω P00 to P07, P10 to P17, P20 to P27, P30 to P37, P40 to P47, P50 to P57, P60 to P67, P72 to P77, P80 to P84, P86,P87, P90 to P97, P100 to P107 V XCOUT 0 0 HIGHPOWER LOWPOWER VI=0V 20330 When clock is stopped Ta=25 °C 1.0 µA Ta=85 °C 20.0 When clock is stopped f(XCIN)=32kHz When a WAIT instruction is executed. Oscillation capacity High (Note2) 2.8 µA 0.9 µA f(XCIN)=32kHz When a WAIT instruction is executed. Oscillation capacity Low (Note2) Square wave, no division f(XIN)=10MHz mA 12.021.25 Flash memory 3V version Square wave f(XCIN)=32kHz 45.0 µA Mask ROM version, flash memory 3V version SDA, CLK0 to CLK4, TA2OUT to TA4OUT, HOLD, RDY, TA0IN to TA4IN, TB0IN to TB5IN, INT0 to INT5, NMI, ADTRG, CTS0 to CTS2, SCL, KI0 to KI3, RxD0 to RxD2, SIN3, SIN4 Mask ROM version, flash memory 3V version Flash memory 3V version program F lash memory 3V version erase Square wave, division by 2 f(XIN)=10MHz Square wave, division by 2 f(XIN)=10MHz 14.0 17.0 mA mA Symbol VOH HIGH output voltage VOH VOL LOW output voltage LOW output voltage VOL HIGH output voltage Standard Typ. Unit Measuring condition MinMax. Parameter HIGH output voltage With no load applied With no load applied Hysteresis Hysteresis HIGH input current IIH LOW input current IIL VRAM RAM retention voltage ICC Power supply current VT+–VT– VT+–VT– RfXIN RfXCIN Feedback resistance Feedback resistance RPULLUP LOW output voltage With no load applied With no load applied In single-chip mode, the output pins are open and other pins are VSS Pull-up resistance Note 1: Specify a product of -40 °C to 85°C to use it. Note 2: With one timer operated using fC32. |
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