2014. 12. 01

2/6

KF16N25F

Revision No : 1

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

250

-

-

V

Breakdown Voltage Temperature Coefficient

ΔBV

-

0.29

-

V/

℃

Drain Cut-off Current

-

-

10

㎂

Gate Threshold Voltage

2.0

-

4.0

V

Gate Leakage Current

-

-

±100

nA

Drain-Source ON Resistance

-

0.2

0.24

Ω

Dynamic

Total Gate Charge

(Note4,5)

-

21

-

nC

Gate-Source Charge

-

5

-

Gate-Drain Charge

-

8

-

Turn-on Delay time

(Note4,5)

-

23

-

ns

Turn-on Rise time

-

19

-

Turn-off Delay time

-

57

-

Turn-off Fall time

-

22

-

Input Capacitance

-

930

-

pF

Output Capacitance

-

140

-

Reverse Transfer Capacitance

-

16

-

Source-Drain Diode Ratings

Continuous Source Current

-

-

13

A

Pulsed Source Current

-

-

39

Diode Forward Voltage

-

-

1.4

V

Reverse Recovery Time

dIs/dt=100A/

㎲

-

170

-

ns

Reverse Recovery Charge

-

1.15

-

μC

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 4) Pulse Test : Pulse width

≤300㎲, Duty Cycle≤2%.

Note 5) Essentially independent of operating temperature.

2

PRODUCT NAME

LOT NO

1

001

2

KF16N25

F

1

Marking