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MA4SW110 Datasheet(PDF) 1 Page - Tyco Electronics |
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MA4SW110 Datasheet(HTML) 1 Page - Tyco Electronics |
1 / 8 page Specification Subject to Change Without Notice M/A-COM, Inc. _______________________________________________________________________________ 1 North America: Tel. (800) 366-2266 Fax (800) 618-8883 þ Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 þ 1Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Features • Broad Bandwidth • Specified up to 20 GHz • Usable to 26.5 GHz • Low Insertion Loss / High Isolation • Rugged, Fully Monolithic, Glass Encapsulated Construction Description The MA4SW110, 210 and 310 series are broad band monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as small signal, high performance switches in applications up to 26.5 Ghz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beam lead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using M/A-COM’s patented HMIC TM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon leads, while gold backside metalization allows for manual or automatic chip bonding via 80/20 AuSn solder or conductive epoxy Absolute Maximum Ratings1 1. Exceeding these limits may cause permanent damage. MA4SW110 (SPST) Broadband Monolithic Silicon PIN Diode Switches Rev 5.0 MA4SW110 MA4SW210 MA4SW310 MA4SW210 (SPDT) MA4SW310 (SP3T) Parameter Absolute Maximum Operating Temperature -65 oC to +125oC Storage Temperature -65 oC to +150oC Applied Voltage (Reverse) 50 volts RF Incident Power +30 dBm Bias Current 50mA |
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