2009. 6. 15

1/4

SEMICONDUCTOR

TECHNICAL DATA

KMB8D0P30QA

P-Ch Trench MOSFET

Revision No : 0

GENERAL DESCRIPTION

This Trench MOSFET has better characteristics, such as fast switching time, low

on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly

suitable for Load Switch and Battery pack.

FEATURES

・V

・Drain to Source On Resistance.

MOSFET Maximum Ratings (Ta=25

℃ Unless otherwise noted)

FLP-8

0.20+0.1/-0.05

P

T

1.27

U

0.1 MAX

MILLIMETERS

0.4 0.1

0.15+0.1/-0.05

4.85 0.2

B2

G

H

L

D

A

B1

DIM

6.02 0.3

1.63 0.2

0.65 0.2

3.94 0.2

+

_

+

_

+

_

+

_

+

_

+

_

G

H

B1 B2

1

4

5

8

A

P

D

L

T

U

Note1) Surface Mounted on 1

″×1″FR4 Board, t≤10sec.

1

2

3

4

8

7

6

5

S

S

S

G

D

D

D

D

1

2

3

4

8

7

6

5

KMB8D0P

30QA

PIN CONNECTION (TOP VIEW)

CHARACTERISTIC

SYMBOL RATING

UNIT

Drain to Source Voltage

30

V

Gate to Source Voltage

±20

V

Drain Current

DC@Ta=25

℃ (Note 1)

-8

A

Pulsed

-40

A

Drain Power Dissipation

@Ta=25

℃

(Note 1)

2.5

W

Maximum Junction Temperature

150

℃

Storage Temperature Range

-55~150

℃

Thermal Resistance, Junction to Ambient

(Note 1)

50

℃/W