ZXM66P02N8

Document Number DS31965 Rev. 2 - 2

1 of 5

www.diodes.com

October 2009

© Diodes Incorporated

A Product Line of

Diodes Incorporated

ZXM66P02N8

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

-20V

0.025

Ω

-8.0A

Description and Applications

This high density MOSFET utilizes a unique structure that combines

the benefits of a low on-resistance with fast switching speed. This

makes it ideal for high efficiency, low voltage power management

applications. Compared to trenchFET technology, this MOSFET

structure has an intrinsically higher pulse current handling capability

in linear mode.

•

Inrush protection circuits

•

DC-DC Converters

•

Power management functions

•

Disconnect switches

•

Motor control

Features and Benefits

•

High pulse current handling in linear mode

•

Low on-resistance

•

Fast switching speed

•

Low gate drive

•

Low profile SOIC package

Mechanical Data

•

Case: SO-8

•

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminals Connections: See diagram below

•

Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

•

Weight: 0.074 grams (approximate)

Product

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

ZXM66P02N8TA

See below

7

12

500

Notes:

1. For packaging details, go to our website.

Marking Information

Top View

Equivalent Circuit

ZXM = Product Type Marking Code, Line 1

66P02 = Product Type Marking Code, Line 2

YYWW = Date Code Marking

YY = Year (ex: 09 = 2009)

WW = Week (01-52)

ZXM

66P02

YYWW

Top View

SO-8

D

S

G

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