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ZXM66P02N8 Datasheet(PDF) 1 Page - Diodes Incorporated |
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ZXM66P02N8 Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 5 page ZXM66P02N8 Document Number DS31965 Rev. 2 - 2 1 of 5 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) ID -20V 0.025 Ω -8.0A Description and Applications This high density MOSFET utilizes a unique structure that combines the benefits of a low on-resistance with fast switching speed. This makes it ideal for high efficiency, low voltage power management applications. Compared to trenchFET technology, this MOSFET structure has an intrinsically higher pulse current handling capability in linear mode. • Inrush protection circuits • DC-DC Converters • Power management functions • Disconnect switches • Motor control Features and Benefits • High pulse current handling in linear mode • Low on-resistance • Fast switching speed • Low gate drive • Low profile SOIC package Mechanical Data • Case: SO-8 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals Connections: See diagram below • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Weight: 0.074 grams (approximate) Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXM66P02N8TA See below 7 12 500 Notes: 1. For packaging details, go to our website. Marking Information Top View Equivalent Circuit ZXM = Product Type Marking Code, Line 1 66P02 = Product Type Marking Code, Line 2 YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) ZXM 66P02 YYWW Top View SO-8 D S G Please click here to visit our online spice models database. |
Similar Part No. - ZXM66P02N8_15 |
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Similar Description - ZXM66P02N8_15 |
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