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ZXMC3AMC Datasheet(PDF) 7 Page - Diodes Incorporated |
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ZXMC3AMC Datasheet(HTML) 7 Page - Diodes Incorporated |
7 / 11 page ZXMC3AMC Document number: DS35088 Rev. 1 - 2 7 of 11 www.diodes.com December 2010 © Diodes Incorporated ZXMC3AMC A Product Line of Diodes Incorporated Electrical Characteristics – Q2 P-Channel @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -30 - - V ID = -250μA, VGS = 0V Zero Gate Voltage Drain Current IDSS - - -0.5 μA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1.0 - -3.0 V ID = -250μA, VDS = VGS Static Drain-Source On-Resistance (Note 13) RDS (ON) - 0.150 0.210 Ω VGS = -10V, ID = -1.4A 0.280 0.330 VGS = -4.5V, ID = -1.1A Forward Transconductance (Note 13 & 14) gfs - 2.48 - S VDS = -15V, ID = -1.4A Diode Forward Voltage (Note 13) VSD - -0.85 -0.95 V IS = -1.1A, VGS = 0V Reverse Recover Time (Note 14) trr - 18.6 - ns IS = -0.95A, di/dt = 100A/µs Reverse Recover Charge (Note 14) Qrr - 14.8 - nC DYNAMIC CHARACTERISTICS (Note 14) Input Capacitance Ciss - 206 - pF VDS = -15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 59.3 - pF Reverse Transfer Capacitance Crss - 49.2 - pF Total Gate Charge (Note 15) Qg - 3.8 - nC VGS = -4.5V VDS = -15V ID = -1.4A Total Gate Charge (Note 15) Qg - 6.4 - nC VGS = -10V Gate-Source Charge (Note 15) Qgs - 0.69 - nC Gate-Drain Charge (Note 15) Qgd - 2.0 - nC Turn-On Delay Time (Note 15) tD(on) - 1.5 - ns VDS = -15V, ID = -1A VGS = -10V, RG = 6Ω Turn-On Rise Time (Note 15) tr - 2.8 - ns Turn-Off Delay Time (Note 15) tD(off) - 11.3 - ns Turn-Off Fall Time (Note 15) tf - 7.5 - ns Notes: 13. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%. 14. For design aid only, not subject to production testing. 15. Switching characteristics are independent of operating junction temperature. |
Similar Part No. - ZXMC3AMC_15 |
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Similar Description - ZXMC3AMC_15 |
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