BC847 datasheet(1/3 Pages) KEC

Part #	BC847

Description	EPITAXIAL PLANAR NPN TRANSISTOR

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Manufacturer	KEC [KEC(Korea Electronics)]

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2009. 6. 22

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SEMICONDUCTOR

TECHNICAL DATA

BC846/7/8

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 4

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION .

FEATURES

・High Voltage : BC846 V

CEO=65V.

・For Complementary With PNP Type BC856/857/858.

MAXIMUM RATING (Ta=25

℃)

DIM

MILLIMETERS

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.40+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

Q

0.1 MAX

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P7

+

_

Q

1. EMITTER

2. BASE

3. COLLECTOR

TYPE

BC846A

BC846B

BC847A

BC847B

BC847C

BC848A

BC848B

BC848C

MARK

1A

1B

1E

1F

1G

1J

1K

1L

MARK SPEC

Type Name

Marking

Lot No.

P

C* : Package Mounted On 99.5% Alumina 10×8×0.6mm.

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

BC846

VCBO

80

V

BC847

50

BC848

30

Collector-Emitter

Voltage

BC846

VCEO

65

V

BC847

45

BC848

30

Emitter-Base Voltage

BC846

VEBO

6

V

BC847

6

BC848

5

Collector Current

DC

IC

100

mA

PULSE

ICP

200

Base Current

IB

20

mA

Emitter Current

IE

-100

mA

Collector Power Dissipation

PC *

350

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

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