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IRF40R207 Datasheet(PDF) 2 Page - International Rectifier |
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IRF40R207 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRF40R207 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 Absolute Maximum Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 90 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 64 IDM Pulsed Drain Current 337* PD @TC = 25°C Maximum Power Dissipation 83 W Linear Derating Factor 0.56 W/°C VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy 86 mJ EAS (Thermally limited) Single Pulse Avalanche Energy 165 IAR Avalanche Current See Fig 15, 16, 23a, 23b A EAR Repetitive Avalanche Energy mJ Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 1.8 °C/W RCS Junction-to-Ambient (PCB Mounted) ––– 50 RJA Junction-to-Ambient ––– 110 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 56 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.039 ––– V/°C Reference to 25°C, ID = 1.0mA RDS(on) ––– 4.2 5.1 m VGS = 10V, ID = 55A ––– 5.9 ––– VGS = 6.0V, ID = 28A VGS(th) Gate Threshold Voltage 2.2 3.0 3.9 V VDS = VGS, ID = 50µA IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS =40 V, VGS = 0V ––– ––– 150 VDS =40V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 2.0 ––– Static Drain-to-Source On-Resistance Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.056mH,RG = 50, IAS = 55A, VGS =10V. ISD 55A, di/dt 890A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1mH,RG = 50, IAS = 18A, VGS =10V. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.: http://www.irf.com/technical-info/appnotes/an-994.pdf * Pulse drain current is limited at 224A by source bonding technology. |
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