IRF2805PbF

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.45

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

Junction-to-Ambient

–––

62

Thermal Resistance

07/22/10

www.irf.com

1

TO-220AB

HEXFET(R) is a registered trademark of International Rectifier.

S

D

G

Description

l

Advanced Process Technology

l

Ultra Low On-Resistance

l

175°C Operating Temperature

l

Fast Switching

l

Repetitive Avalanche Allowed up to Tjmax

l

Lead-Free

Typical Applications

l

Industrial Motor Drive

techniques to achieve extremely low on-resistance per silicon

area. Additional features of this design are a 175°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating . These features combine to make

this design an extremely efficient and reliable device for use

in a wide variety of applications.

Parameter

Max.

Units

175

120

A

75

Pulsed Drain Current



700

Power Dissipation

330

W

Linear Derating Factor

2.2

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚

450

mJ

Single Pulse Avalanche Energy Tested Value

‡

1220

Avalanche Current



See Fig.12a, 12b, 15, 16

A

Repetitive Avalanche Energy

†

mJ

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting Torque, 6-32 or M3 screw

1.1 (10)

N•m (lbf•in)

Absolute Maximum Ratings

Features

PD - 95493A