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MRF1004MB Datasheet(PDF) 1 Page - Tyco Electronics |
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MRF1004MB Datasheet(HTML) 1 Page - Tyco Electronics |
1 / 5 page The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak Minimum Gain = 10 dB • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Industry Standard Package • Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input Matching for Broadband Operation MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 50 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Continuous IC 250 mAdc Total Device Dissipation @ TC = 25°C (1) Derate above 25 °C PD 7.0 40 Watts mW/ °C Storage Temperature Range Tstg –65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (2) RθJC 25 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) V(BR)CEO 20 — — Vdc Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) V(BR)CES 50 — — Vdc Collector–Base Breakdown Voltage (IC = 5.0 mAdc, IE = 0) V(BR)CBO 50 — — Vdc Emitter–Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc Collector Cutoff Current (VCB = 35 Vdc, IE = 0) ICBO — — 0.5 mAdc ON CHARACTERISTICS DC Current Gain (IC = 75 mAdc, VCE = 5.0 Vdc) hFE 10 — 100 — NOTES: (continued) 1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. MRF1004MB 4.0 W, 960–1215 MHz MICROWAVE POWER TRANSISTORS NPN SILICON CASE 332A–03, STYLE 1 Order this document by MRF1004MB/D SEMICONDUCTOR TECHNICAL DATA 1 REV 8 |
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