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ZXMN3B01F Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZXMN3B01F Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page ZXMN3B01F SEMICO NDUC TORS ISSUE 1 - DECEMBER 2005 2 PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R JA 200 °C/W Junction to Ambient (b) R JA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGS 12 V Continuous Drain Current @V GS=4.5V; TA=25°C (b) @VGS=4.5V; TA=70°C (b) @VGS=4.5V; TA=25°C (a) ID 2.0 1.6 1.7 A A A Pulsed Drain Current (c) IDM 9.4 A Continuous Source Current (Body Diode) (b) IS 1.3 A Pulsed Source Current (Body Diode) (c) ISM 9.4 A Power Dissipation at TA =25°C (a) Linear Derating Factor PD 625 5 mW mW/°C Power Dissipation at TA =25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range Tj,Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS |
Similar Part No. - ZXMN3B01F_15 |
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Similar Description - ZXMN3B01F_15 |
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