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ZXMN3B04N8 Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZXMN3B04N8 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page ZXMN3B04N8 SEMICO NDUC TORS ISSUE 2 - MAY 2004 2 PARAMETER SYMBOL VALUE UNIT Junction to ambient (a) R JA 62.5 °C/W Junction to ambient (b) R JA 41.4 °C/W NOTES (a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDSS 30 V Gate source voltage VGS 12 V Continuous drain current @ VGS=4.5V; TA=25°C (b) @VGS=4.5V; TA=70°C (b) @VGS=4.5V; TA=25°C (a) ID 8.9 7.3 7.2 A A A Pulsed drain current (c) IDM 45 A Continuous source current (body diode) (b) IS 4.5 A Pulsed source current (body diode) (c) ISM 45 A Power dissipation at TA=25°C (a) Linear derating factor PD 2 16 W mW/°C Power dissipation at TA=25°C (b) Linear derating factor PD 3 24 W mW/°C Operating and storage temperature range Tj:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS |
Similar Part No. - ZXMN3B04N8_15 |
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Similar Description - ZXMN3B04N8_15 |
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