The RF Line

Microwave Pulse

Power Transistor

Designed for Class B and C common base amplifier applications in short

pulse TACAN, IFF, and DME transmitters.

• Guaranteed Performance @ 1090 MHz, 50 Vdc

Output Power = 90 Watts Peak

Minimum Gain = 8.4 dB

• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

• Industry Standard Package

• Nitride Passivated

• Gold Metallized for Long Life and Resistance to Metal Migration

• Internal Input Matching for Broadband Operation

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Base Voltage

70

Vdc

Emitter–Base Voltage

4.0

Vdc

Collector–Current — Peak (1)

6.0

Adc

Derate above 25

°C

290

1.66

Watts

W/

°C

Storage Temperature Range

–65 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case (3)

0.6

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

70

—

—

Vdc

Collector–Base Breakdown Voltage

70

—

—

Vdc

Emitter–Base Breakdown Voltage

4.0

—

—

Vdc

Collector Cutoff Current

—

—

5.0

mAdc

ON CHARACTERISTICS

DC Current Gain (4)

10

30

—

—

NOTES:

(continued)

1. Pulse Width = 10

µs, Duty Cycle = 1%.

2. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.

3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.

4. 80

µs Pulse on Tektronix 576 or equivalent.

MRF1090MB

90 W PEAK, 960–1215 MHz

MICROWAVE POWER

TRANSISTOR

NPN SILICON

CASE 332A–03, STYLE 1

Order this document

by MRF1090MB/D

SEMICONDUCTOR TECHNICAL DATA

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