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MRF1090MB Datasheet(PDF) 1 Page - Tyco Electronics |
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MRF1090MB Datasheet(HTML) 1 Page - Tyco Electronics |
1 / 4 page The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Industry Standard Package • Nitride Passivated • Gold Metallized for Long Life and Resistance to Metal Migration • Internal Input Matching for Broadband Operation MAXIMUM RATINGS Rating Symbol Value Unit Collector–Base Voltage VCBO 70 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector–Current — Peak (1) IC 6.0 Adc Total Device Dissipation @ TC = 25°C (1) (2) Derate above 25 °C PD 290 1.66 Watts W/ °C Storage Temperature Range Tstg –65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (3) RθJC 0.6 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) V(BR)CES 70 — — Vdc Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0) V(BR)CBO 70 — — Vdc Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc Collector Cutoff Current (VCB = 50 Vdc, IE = 0) ICBO — — 5.0 mAdc ON CHARACTERISTICS DC Current Gain (4) (IC = 2.5 Adc, VCE = 5.0 Vdc) hFE 10 30 — — NOTES: (continued) 1. Pulse Width = 10 µs, Duty Cycle = 1%. 2. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. 4. 80 µs Pulse on Tektronix 576 or equivalent. MRF1090MB 90 W PEAK, 960–1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 332A–03, STYLE 1 Order this document by MRF1090MB/D SEMICONDUCTOR TECHNICAL DATA 1 REV 0 |
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