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ZXMN6A08G Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZXMN6A08G Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page  ZXMN6A08G Document Number DS33550 Rev. 2 - 2 2 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXMN6A08G Absolute Maximum Ratings Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current VGS = 10V TA = +25°C (Note 6) ID 5.3 A TA = +70°C (Note 6) 4.2 A TA = +25°C (Note 5) 3.8 A Pulsed Drain Current (Note 7) IDM 20 A Continuous Source Current (body diode)( Note 6) IS 2.1 A Pulsed Source Current (body diode)( Note 7) ISM 20 A Power Dissipation at TA = +25°C (Note 5) Linear Derating Factor PD 2 16 W mW/°C Power Dissipation at TA = +25°C (Note 6) Linear Derating Factor PD 3.9 31 W mW/°C Linear Derating Factor TJ, TSTG -55 to +150 °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Junction to Ambient (Note 5) RθJA 62.5 °C/W Junction to Ambient (Note 6) RθJA 32 °C/W Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 60 − − V VGS = 0V, ID =250µA Zero Gate Voltage Drain Current IDSS − − 0.5 µA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS − − 100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 1 − - V VDS = VGS, ID = 250µA Static Drain-Source On-State Resistance (Note 8) RDS (ON) − − 0.08 VGS = 10V, ID = 4.8A − − 0.15 VGS = 4.5V, ID = 4.2A Forward Transconductance (Notes 8 &10) gfs − 6.6 − S VDS =15V,ID =4.8A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss − 459 − pF VDS = 40V, VGS = 0V, f = 1MHz Output Capacitance Coss − 44.2 − pF Reverse Transfer Capacitance Crss − 24.1 − pF Turn-On Delay Time (Note 9) tD(on) − 2.6 − ns VDD = 30V, ID=1.5A RG ≅ 6.0 , VGS= 10V Turn-On Rise Time (Note 9) tr − 2.1 − ns Turn-Off Delay Time (Note 9) tD(off) − 12.3 − ns Turn-Off Fall Time (Note 9) tf − 4.6 − ns Gate Charge (Note 9) Qg − 4.0 − nC VDS= 30V, VGS= 5V ID= 1.4A Total Gate Charge (Note 9) Qg − 5.8 − nC VDS= 30V, VGS= 10V ID= 1.4A Gate-Source Charge (Note 9) Qgs − 1.4 − nC Gate Drain Charge (Note 9) Qgd − 1.9 − nC SOURCE-DRAIN DIODE Diode Forward Voltage (Note 8) VSD − 0.88 1.2 V Tj=+25°C, IS= 4A, VGS=0V Reverse Recovery Time (Note 10) trr − 19.2 − ns Tj=+25°C, IS= 1.4A, di/dt=100A/µs Reverse Recovery Charge (Note 10) Qrr − 30.3 − nC Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR4 PCB measured at t <= 10 sec. 7. Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300_s - pulse width limited by maximum junction temperature. 8. Measured under pulsed conditions. Pulse width <= 300_s; duty cycle <=2%. 9. Switching characteristics are independent of operating junction temperature. 10. For design aid only, not subject to production testing. |
Similar Part No. - ZXMN6A08G_15 |
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Similar Description - ZXMN6A08G_15 |
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