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KTC4374 Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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KTC4374 Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page  1998. 6. 15 1/2 SEMICONDUCTOR TECHNICAL DATA KTC4374 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 2 GENERAL PURPOSE APPLICATION. FEATURES 1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTA1662. MAXIMUM RATING (Ta=25 ) DIM A B D E G H K 4.70 MAX 2.50 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 SOT-89 C J G D 12 3 2. COLLECTOR (HEAT SINK) A C K F MILLIMETERS H 1. BASE 3. EMITTER FF D + _ + _ ELECTRICAL CHARACTERISTICS (Ta=25 ) Note : hFE Classification O:70 140, Y:120 240 PC* : KTA1662 mounted on ceramic substrate (250mm 2x0.8t) Type Name h Rank FE Lot No. Marking CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=80V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 80 - - V DC Current Gain hFE(1) (Note) VCE=2V, IC=50mA 70 - 240 hFE(2) VCE=2V, IC=200mA 50 - - Collector-Emitter Saturation Voltage VCE(sat) IC=200mA, IB=20mA - - 0.4 V Base-Emitter Voltage VBE VCE=2V, IC=5mA 0.55 - 0.8 V Transition Frequency fT VCE=10V, IC=10mA - 100 - MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 10 - pF CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current IC 400 mA Base Current IB 80 mA Collector Power Dissipation PC 500 mW PC* 1 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 |
Similar Part No. - KTC4374_15 |
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Similar Description - KTC4374_15 |
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