ZXMN6A11G

Document number: DS33556 Rev. 6 - 2

4 of 8

www.diodes.com

March 2015

© Diodes Incorporated

ZXMN6A11G

A Product Line of

Diodes Incorporated

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60





V

Zero Gate Voltage Drain Current





1.0

µA

Gate-Source Leakage





100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1.0



3.0

V

Static Drain-Source On-Resistance (Note 6)



0.105

0.120

Ω



0.150

0.180

Forward Transconductance (Notes 6 & 7)



4.9



S

Diode Forward Voltage (Note 6)



0.85

0.95

V

Reverse Recovery Time (Note 7)



21.5



ns

Reverse Recovery Charge (Note 7)



20.5



nC

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance



330



pF

f = 1.0MHz

Output Capacitance



35.2



Reverse Transfer Capacitance



17.1



Gate Charge (Note 8)



3.0



nC

Total Gate Charge (Note 8)



5.7



Gate-Source Charge (Note 8)



1.25



Gate-Drain Charge (Note 8)



0.86



Turn-On Delay Time (Note 8)



1.95



ns

Turn-On Rise Time (Note 8)



3.5



Turn-Off Delay Time (Note 8)



8.2



Turn-Off Fall Time (Note 8)



4.6



Notes:

6. Measured under pulsed conditions. Pulse width

7. For design aid only, not subject to production testing.

8. Switching characteristics are independent of operating junction temperature.