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ZXMN7A11GTC Datasheet(PDF) 4 Page - Diodes Incorporated |
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ZXMN7A11GTC Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 8 page ZXMN7A11G Document number: DS33562 Rev. 2 - 2 4 of 8 www.diodes.com March 2015 © Diodes Incorporated ZXMN7A11G Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 70 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 70V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 1.0 — — V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance (Note 8) RDS (ON) — — 0.13 Ω VGS = 10V, ID = 4.4A — — 0.19 VGS = 4.5V, ID = 3.8A Forward Transfer Admittance gfs — 4.66 — S VDS = 15V, ID = 4.4A Diode Forward Voltage (Note 8) VSD — 0.85 0.95 V TJ = +25°C , VGS = 0V, IS = 2.5A DYNAMIC CHARACTERISTICS (Notes 9 &10) Input Capacitance Ciss — 298 — pF VDS = 50V, VGS = 0V f = 1.0MHz Output Capacitance Coss — 35 — Reverse Transfer Capacitance Crss — 21 — Total Gate Charge Qg — 4.35 — nC VDS = 35V, VGS = 5.0V, ID = 4.4A Total Gate Charge Qg — 7.4 — nC VDS = 35V, VGS = 10V, ID = 4.4A Gate-Source Charge Qgs — 1.06 — Gate-Drain Charge Qgd — 1.8 — Turn-On Delay Time tD(on) — 1.9 — ns VDS = 35V, VGS = 10V, ID = 1 ARG 6.0Ω Turn-On Rise Time tr — 2 — Turn-Off Delay Time tD(off) — 11.5 — Turn-Off Fall Time tf — 5.8 — Body Diode Reverse Recovery Time trr — 19.8 ns TJ = +25°C, IS = 2.5A, dI/dt = 100A/ μs Body Diode Reverse Recovery Charge Qrr — 14 nC Notes: 8. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%. 9 .Switching characteristics are independent of operating junction temperature. 10. For design aid only, not subject to production testing. |
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