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KTD718_15 Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD718_15
Description  TRIPLE DIFFUSED NPN TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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1997. 1. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTD718
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 0
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Recommended for 45 50W Audio Frequency
Amplifier Output Stage.
Complementary to KTB688.
MAXIMUM RATING (Ta=25 )
1. BASE
2. COLLECTOR
3. EMITTER
TO-3P(N)
K
A
D
B
d
P
PT
M
Q
12
3
A
15.9 MAX
MILLIMETERS
DIM
B
4.8 MAX
C
20.0 0.3
D
2.0 0.3
d
1.0+0.3/-0.25
E2.0
F1.0
G
3.3 MAX
H9.0
I4.5
J
2.0
K
1.8 MAX
L
20.5 0.5
P
5.45 0.2
Q
Ī¦3.2 0.2
T
0.6+0.3/-0.1
2.8
M
+_
+_
+_
+_
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE Classification R:55 110, O:80 160
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
10
A
Base Current
IB
1
A
Collector Power Dissipation (Tc=25 )
PC
80
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=120V, IE=0
-
-
10
A
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
-
-
10
A
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=50mA, IB=0
120
-
-
V
DC Current Gain
hFE (Note)
VCE=5V, IC=1A
55
-
160
Collector-Emitter Saturation Voltage
VCE(sat)
IC=6A, IB=0.6A
-
-
2.0
V
Base-Emitter Voltage
VBE
VCE=5V, IC=5A
-
-
1.5
V
Transition Frequency
fT
VCE=5V, IC=1A
-
12
-
MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
-
170
-
pF




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