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KTD718B Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD718B
Description  TRIPLE DIFFUSED NPN TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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2005. 3. 14
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTD718B
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 1
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Recommended for 45
50W Audio Frequency Amplifier Output Stage.
Complementary to KTB688B.
MAXIMUM RATING (Ta=25
)
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-3P(N)-E
K
A
D
B
d
PP
T
Q
1
2
3
M
N
O
E
A
MILLIMETERS
DIM
B
C
D
d
E
F
G
H
I
J
K
L
O
N
P
Q
M
19.90
0.20
2.00
0.20
1.00
0.20
3.00
0.20
3.80
0.20
3.50
0.20
13.90
0.20
12.76
0.20
23.40
0.20
1.5+0.15-0.05
16.50
0.30
1.40
0.20
13.60
0.20
9.60
0.20
5.45
0.30
R
T
0.60+0.15-0.05
15.60
0.20
+
_
4.80
0.20
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
3.20
0.10
+
_
18.70
0.20
+
_
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : hFE Classification
R:55
110,
O:80
160
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
10
A
Base Current
IB
1
A
Collector Power Dissipation (Tc=25
)
PC
80
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=120V, IE=0
-
-
10
A
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
-
-
10
A
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=50mA, IB=0
120
-
-
V
DC Current Gain
hFE (Note)
VCE=5V, IC=1A
55
-
160
Collector-Emitter Saturation Voltage
VCE(sat)
IC=6A, IB=0.6A
-
-
2.0
V
Base-Emitter Voltage
VBE
VCE=5V, IC=5A
-
-
1.5
V
Transition Frequency
fT
VCE=5V, IC=1A
-
12
-
MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
-
170
-
pF




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