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KTD863_15 Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD863_15
Description  TRIPLE DIFFUSED NPN TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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2012. 11. 02
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD863
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 2
VOLTAGE REGULATOR, RELAY,
LAMP DRIVER, INDUSTRIAL USE
FEATURES
・High Voltage : V
CEO=60V(Min.).
・High Current : I
C(Max.)=1A.
・High Transition Frequency : f
T=150MHz(Typ.).
・Wide Area of Safe Operation.
・Complementary to KTB764.
MAXIMUM RATING (Ta=25
℃)
DIM
MILLIMETERS
A
B
D
E
G
H
K
L
1. EMITTER
2. COLLECTOR
3. BASE
P
TO-92L
7.20 MAX
5.20 MAX
2.50 MAX
0.60 MAX
1.27
1.70 MAX
0.55 MAX
14.00 0.50
0.35 MIN
0.75 0.10
4
F
J
M
O
Q
25
1.25
Φ1.50
0.10 MAX
DEPTH:0.2
123
B
C
Q
K
FF
M
M
N
N
H
L
D
C
N
P
HH
E
H
S
12.50 0.50
R
1.00
S
1.15 MAX
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25
℃)
Note : hFE(1) Classification O:60~120, Y:100~200, GR:160~320
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
DC
IC
1
A
Pulse
ICP
2
Collector Power Dissipation
PC
1
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
~150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=50V, IE=0
-
-
1
μA
Emitter Cut-off Current
IEBO
VEB=4V, IC=0
-
-
1
μA
DC Current Gain
hFE(1)
VCE=2V, IC=50mA
60
-
320
hFE(2)
VCE=2V, IC=1A
30
-
-
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, IB=0
60
-
-
V
Collector-Emitter Saturation Voltage
VCE(sat)
IC=500mA, IB=50mA
-
0.15
0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=500mA, IB=50mA
-
0.85
1.2
V
Transition Frequency
fT
VCE=10V, IC=50mA
-
150
-
MHz
Collector Output Capacitance
Cob
VCB=10V, f=1MHz, IE=0
-
12
-
pF




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