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KTD882_15 Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD882_15
Description  EPITAXIAL PLANAR NPN TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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2003. 6. 16
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD882
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 4
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
FEATURES
Complementary to KTB772.
MAXIMUM RATING (Ta=25 )
TO-126
H
J
MILLIMETERS
C
E
F
G
D
A
B
DIM
A
C
E
F
G
H
J
K
M
O
P
N
L
D
1. EMITTER
2. COLLECTOR
3. BASE
K
L
M
N
O
P
8.3 MAX
5.8
0.7
Ī¦3.2 0.1
3.5
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 0.15
2.3 0.1
0.65 0.15
1.6
3.4 MAX
B
1
23
+_
+_
+_
15.5 0.5
+_
+_
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
* Pulse Test : Pulse Width 350 S, Duty Cycle 2% Pulsed
Note: hFE(2) Classification
O:100 200 , Y:160 320 , GR:200 400
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
DC
IC
3
A
Pulse (Note)
ICP
7
Base Current (DC)
IB
0.6
A
Collector Power
Dissipation
Ta=25
PC
1.5
W
Tc=25
10
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=30V, IE=0
-
-
1
A
Emitter-Cut-off Current
IEBO
VEB=3V, IC=0
-
-
1
A
DC Current Gain
*
hFE(1)
VCE=2V, IC=20mA
30
150
-
hFE(2) (Note)
VCE=2V, IC=1A
100
160
400
Collector-Emitter Saturation Voltage
*
VCE(sat)
IC=2A, IB=0.2A
-
0.3
0.5
V
Base-Emitter Saturation Voltage
*
VBE(sat)
IC=2V, IB=0.2A
-
1.0
2.0
V
Current Gain Bandwidth Product
fT
VCE=5V, IC=0.1A
-
90
-
MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
-
45
-
pF
Note : Pulse Width
10mS, Duty Cycle 50%.




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