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KTD1047_15 Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD1047_15
Description  TRIPLE DIFFUSED NPN TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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1999. 11. 16
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD1047
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 1
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Complementary to KTB817.
Recommended for 60W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-3P(N)
K
A
D
B
d
P
PT
M
Q
12
3
A
15.9 MAX
MILLIMETERS
DIM
B
4.8 MAX
C
20.0 0.3
D
2.0 0.3
d
1.0+0.3/-0.25
E2.0
F1.0
G
3.3 MAX
H9.0
I4.5
J
2.0
K
1.8 MAX
L
20.5 0.5
P
5.45 0.2
Q
Ī¦3.2 0.2
T
0.6+0.3/-0.1
2.8
M
+_
+_
+_
+_
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE(1) Classification O:60 120, Y:100 200
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
160
V
Collector-Emitter Voltage
VCEO
140
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
DC
IC
12
A
Pulse
ICP
15
Collector Power Dissipation (Tc=25 )
PC
100
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=80V, IE=0
-
-
0.1
mA
Emitter Cut-off Current
IEBO
VEB=4V, IC=0
-
-
0.1
mA
DC Current Gain
hFE (1) (Note)
VCE=5V, IC=1A
60
-
200
hFE 2
VCE=5V, IC=6A
20
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=5A, IB=0.5A
-
-
2.5
V
Base-Emitter Voltage
VBE(ON)
VCE=5V, IC=1A
-
-
1.5
V
Transition Frequency
fT
VCE=5V, IC=1A
-
15
-
MHz
Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
-
210
-
pF
Turn On Time
ton
VCC=20V
IC=1A=10 IB1=-10 IB2
RL=20
-
0.26
-
S
Fall Time
tf
-
0.68
-
Storage Time
tstg
-
6.88
-




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