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KTD1898_15 Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD1898_15
Description  EPITAXIAL PLANAR NPN TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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2003. 7. 3
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD1898
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
FEATURES
1W (Mounted on Ceramic Substrate).
Small Flat Package.
Complementary to KTB1260.
MAXIMUM RATING (Ta=25 )
DIM
A
B
D
E
G
H
K
4.70 MAX
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
C
J
G
D
12
3
2. COLLECTOR (HEAT SINK)
A
C
K
F
MILLIMETERS
H
1. BASE
3. EMITTER
FF
D
+_
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE Classification O:70 140, Y:120 240, GR:200 400
* Mounted on ceramic substrate (250mm2 0.8t)
Type Name
h
Rank
FE
Lot No.
Marking
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=80V, IE=0
-
-
1
A
Emitter Cut-off Current
IEBO
VEB=4V, IC=0
-
-
1
A
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, IB=0
80
-
-
V
DC Current Gain
hFE(Note)
VCE=3V, IC=500mA
70
-
400
Collector-Emitter Saturation Voltage
VCE(sat)
IC=500mA, IB=20mA
-
-
0.4
V
Transition Frequency
fT
VCE=10V, IC=50mA, f=100MHz
-
100
-
MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
-
20
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
1
A
Emitter Current
IE
-1
A
Collector Power Dissipation
PC
500
mW
PC*
1
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150




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