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KTD2058_15 Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD2058_15
Description  TRIPLE DIFFUSED NPN TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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2009. 7. 23
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTD2058
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 4
GENERAL PURPOSE APPLICATION.
FEATURES
・Low Saturation Voltage
: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A.
・Complementary to KTB1366.
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
TO-220IS
0.76+0.09/-0.05
A
B
C
D
E
F
G
0.5+0.1/-0.05
H
1.2+0.25/-0.1
1.5+0.25/-0.1
J
K
L
M
N
P
Q
R
1
2
3
L
N
M
D
N
H
E
R
L
S
0.5 Typ
S
D
A
C
2.70 0.3
+_
12.0 0.3
+_
13.6 0.5
+_
3.7 0.2
+_
Φ3.2 0.2
+_
10.0 0.3
+_
15.0 0.3
+_
3.0 0.3
+_
4.5 0.2
+_
2.54 0.1
+_
+
2.6 0.2
_
6.8 0.1
+_
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : hFE Classification
O:60~120, Y:100~200
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
7
V
Collector Current
IC
3
A
Base Current
IB
0.5
A
Collector Power
Dissipation
Ta=25℃
PC
2
W
Tc=25℃
25
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=60V, IE=0
-
-
1
μA
Emitter Cut-off Current
IEBO
VEB=7V, IC=0
-
-
1
μA
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=50mA, IB=0
60
-
-
V
DC Current Gain
hFE (Note)
VCE=5V, IC=0.5A
60
-
200
Collector Emitter Saturation Voltage
VCE(sat)
IC=2A, IB=0.2A
-
0.25
1.0
V
Base-Emitter Voltage
VBE
VCE=5V, IC=0.5A
-
0.7
1.0
V
Transition Frequency
fT
VCE=5V, IC=0.5A
-
3.0
-
MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
-
35
-
pF
Switching
Time
Turn-on Time
ton
IB1
15Ω
B1
I
CC
V =30V
IB2
IB2
20µsec
I =-I =0.2A
1%
B1
B2
OUTPUT
DUTY CYCLE
INPUT
<=
-
0.65
-
μS
Storage Time
tstg
-
1.3
-
Fall Time
tf
-
0.65
-




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