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IRF6620PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF6620PBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 5/11/06 Notes through are on page 2 DirectFET ISOMETRIC MX Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) VDSS RDS(on) max Qg(typ.) 20V 2.7m Ω@VGS = 10V 28nC 3.6m Ω@VGS = 4.5V Description The IRF6620PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6620PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6620PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6620PbF offers particu- larly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. SQ SX ST MQ MX MT PD - 97092 IRF6620PbF IRF6620TRPbF l RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET Power MOSFET Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V k ID @ TA = 25°C Continuous Drain Current, VGS @ 10V Ãh A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V h IDM Pulsed Drain Current e PD @TC = 25°C Power Dissipation k PD @TA = 70°C Power Dissipation h W PD @TA = 25°C Power Dissipation h EAS Single Pulse Avalanche Energy f mJ IAR Avalanche Current Ãg A Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient hl ––– 45 RθJA Junction-to-Ambient il 12.5 ––– RθJA Junction-to-Ambient jl 20 ––– °C/W RθJC Junction-to-Case kl ––– 1.4 RθJ-PCB Junction-to-PCB Mounted 1.0 ––– Max. 27 22 220 ±20 20 150 -40 to + 150 89 0.017 1.8 2.8 39 22 |
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