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SBB4089Z Datasheet(PDF) 1 Page - RF Micro Devices |
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SBB4089Z Datasheet(HTML) 1 Page - RF Micro Devices |
1 / 8 page Features 1 of 8 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. RF MEMS SBB4089Z 50MHz to 6000MHz CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER RFMD’s SBB4089Z is a high performance InGaP HBT MMIC amplifier uti- lizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SBB4089Z does not require a dropping resistor as compared to typical Darlington amplifi- ers. The SBB4089Z product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50 s. Gain and Return Loss versus Frequency (w/ BiasTees) -40 -30 -20 -10 0 10 20 0 1 234 56 Frequency (GHz) 25°C 25°C 25°C S22 S21 S11 OIP3=35.2dBm at 1950MHz P1dB=19.3dBm at 1950MHz Single Fixed 5V Supply Robust 1000V ESD, Class 1C Patented Thermal Design & Bias Circuit Low Thermal Resistance Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS Wideband Instrumentation Wireless Data, Satellite Termi- nals DS150622 Package: SOT-89 SBB4089Z 50MHz to 6000MHz Cascadable Active Bias InGaP HBT MMIC Ampli- fier Parameter Specification Unit Condition Min. Typ. Max. Small Signal Gain 14.0 15.5 17.0 dB 850MHz 13.8 15.0 17.0 dB 1950MHz 13.5 15.5 17.5 dB 2000MHz Output Power at 1dB Compression 19.0 dBm 850MHz 18.0 19.2 dBm 1950MHz Output Third Order Intercept Point 39.0 dBm 850MHz 33.0 35.3 dBm 1950MHz Return Loss 4500 MHz Minimum 10dB Input Return Loss 10.0 16.3 dB 1950MHz Output Return Loss 10.0 18.0 dB 1950MHz Reverse Isolation 18.5 dB 1950MHz Noise Figure 4.3 5.5 dB 1950MHz Operating Temp Range (TL) -40 +105 °C Device Operating Voltage 5.0 5.25 V Device Operating Current 70.0 80.0 92.0 mA Thermal Resistance 69.9 °C/W junction - lead Test Conditions: VD=5V ID=80mA Typ. OIP3 Tone Spacing=1MHz, POUT per tone=0dBm TL=25°C, ZS=ZL=50, Tested with Bias Tees |
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