MRF275 datasheet(8/16 Pages) MACOM

Part #	MRF275

Description	N-CHANNEL MOS BROADBAND 100 . 500 MHz RF POWER FET

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Manufacturer	MACOM [Tyco Electronics]

Direct Link	http://www.macom.com

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Figure 13. 225 MHz Test Circuit

C1

8.0 – 60 pF, Arco 404

C2, C3, C7, C8

1000 pF, Chip Capacitor

C4, C9

0.1

µF, Chip Capacitor

C5

180 pF, Chip Capacitor

C6

100 pF and 130 pF,

Chips in Parallel

C10

0.47

µF, Chip Capacitor, 1215 or

Equivalent, Kemet

L1

10 Turns AWG #16, 1/4

″ I.D.,

Enamel Wire, Close Wound

L2

Ferrite Beads of Suitable Material

for 1.5 – 2.0

µH Total Inductance

Board material

062

″ fiberglass (G10),

εr ^ 5, Two sided, 1 oz. Copper.

Unless otherwise noted, all chip capacitors

are ATC Type 100 or Equivalent.

R1

100

Ω, 1/2 W

R2

1.0 k

Ω, 1/2 W

T1

4:1 Impedance Ratio, RF Transformer

Can Be Made of 25

Ω, Semi Rigid Coax,

47 – 52 Mils O.D.

T2

1:9 Impedance Ratio, RF Transformer.

Can Be Made of 15 – 18

Ω, Semi Rigid

Coax, 62 – 90 Mils O.D.

NOTE: For stability, the input transformer T1 should be loaded

NOTE: with ferrite toroids or beads to increase the common

NOTE: mode inductance. For operation below 100 MHz. The

NOTE: same is required for the output transformer.

BIAS 0 – 6 V

R1

C3

C4

R2

C1

C2

T1

C5

D.U.T.

C6

T2

C7

L1

C8

C9

L2

C10

+

–

28 V

8

REV 1

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Manufacturer	Part #	Datasheet	Description
Motorola, Inc	MRF275	226Kb / 12P	150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
Tyco Electronics	MRF275	312Kb / 13P	N-CHANNEL BROADBAND RF POWER FET
Motorola, Inc	MRF275G	226Kb / 12P	150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
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Manufacturer	Part #	Datasheet	Description
Motorola, Inc	MRF275G	226Kb / 12P	150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
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MRF275 Datasheet(PDF) 8 Page - Tyco Electronics

MRF275 Datasheet(HTML) 8 Page - Tyco Electronics

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